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tl(re,rme,se,oe,ye,pye,ge,fge,pge)53t(f) 2007-10-01 1 toshiba ingaa ? p led tlre53t(f),tlrme53t(f),tlse53t(f),tloe53t(f),tlye53t(f), TLPYE53T(f),tlge53t(f),tlfge53t(f),tlpge53t(f) panel circuit indicators ? lead(pb)-free products (lead: sn-ag-cu) ? 3mm package ? ingaa ? p technology ? all plastic mold ? transparent lens ? lineup: 6 colors (red, orange, yellow, pure yellow, green and pure green) ? high intensity light emission ? excellent low current light output ? applications: message boards, security devices and dashboard displays lineup unit: mm jedec D jeita D toshiba 4-4e1a weight: 0.14 g(typ.) product name color material tlre53t(f) red tlrme53t(f) red tlse53t(f) red tloe53t(f) orange tlye53t(f) yellow TLPYE53T(f) pure yellow tlge53t(f) green tlfge53t(f) green tlpge53t(f) pure green pingaa l
tl(re,rme,se,oe,ye,pye,ge,fge,pge)53t(f) 2007-10-01 2 absolute maximum ratings (ta = 25c) product name forward current i f (ma) reverse voltage v r (v) power dissipation p d (mw) operating temperature t opr (c) storage temperature t stg (c) tlre53t(f) 50 4 120 tlrme53t(f) 50 4 120 tlse53t(f) 50 4 120 tloe53t(f) 50 4 120 tlye53t(f) 50 4 120 TLPYE53T(f) 50 4 120 tlge53t(f) 50 4 120 tlfge53t(f) 50 4 120 tlpge53t(f) 50 4 120 ? 40~100 ? 40~120 note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). electrical and opti cal characteristics (ta = 25c) typ. emission wavelength luminous intensity i v forward voltage v f reverse current i r product name d p ? i f min typ. i f typ. max i f max v r tlre53t (f) 630 (644) 20 20 153 400 20 1.9 2.4 20 50 4 tlrme53t (f) 626 (636) 23 20 272 600 20 1.9 2.4 20 50 4 tlse53t (f) 613 (623) 20 20 272 800 20 1.9 2.4 20 50 4 tloe53t (f) 605 (612) 20 20 272 1000 20 2.0 2.4 20 50 4 tlye53t (f) 587 (590) 17 20 272 800 20 2.0 2.4 20 50 4 TLPYE53T (f) 580 (583) 14 20 153 450 20 2.0 2.4 20 50 4 tlge53t (f) 571 (574) 17 20 153 400 20 2.0 2.4 20 50 4 tlfge53t (f) 565 (568) 15 20 85 200 20 2.0 2.4 20 50 4 tlpge53t (f) 558 (562) 14 20 47.6 130 20 2.1 2.4 20 50 4 unit nm ma mcd ma v ma a v precautions please be careful of the following: ? soldering temperature: 260c max, soldering time: 3 s max (soldering portion of lead: up to 1.6 mm from the body of the device) ? if the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress to the resin. soldering should be performed after lead forming. ? this visible led lamp also emits some ir light. if a photodetector is located near the led lamp, please ensure that it will not be affected by this ir light.
tl(re,rme,se,oe,ye,pye,ge,fge,pge)53t(f) 2007-10-01 3 tlre53t(f) 1.6 50 30 10 3 1 5 100 ta = 25c 1.7 1.8 1.9 2.0 2.1 2.2 2.3 relative luminous intensity forward voltage v f (v) i f ? v f forward current i f (ma) forward current i f (ma) i v ? i f luminous intensity i v (mcd) case temperature tc (c) i v ? tc relative luminous intensity i v wavelength (nm) relative luminous intensity ? wavelength ambient temperature ta (c) i f ? ta allowable forward current i f (ma) radiation pattern ta = 25c 30 0 60 90 90 30 60 1.00.8 0.6 0.4 0.2 0 80 70 50 40 20 10 70 80 50 40 20 10 700 0.8 0 0.6 1.0 0.2 0.4 i f = 20 ma ta = 25c 680 660 640 620 600 580 10 1 100 3000 1000 ta = 25c 100 10 20 ? 20 80 0.1 3 1 0.3 0.5 0 40 60 0 60 0 40 80 20 120 20 40 60 80 100
tl(re,rme,se,oe,ye,pye,ge,fge,pge)53t(f) 2007-10-01 4 tlrme53t(f) 1.6 50 30 10 3 1 5 100 ta = 25c 1.7 1.8 1.9 2.0 2.1 2.2 2.3 relative luminous intensity forward voltage v f (v) i f ? v f forward current i f (ma) forward current i f (ma) i v ? i f luminous intensity i v (mcd) case temperature tc (c) i v ? tc relative luminous intensity i v wavelength (nm) relative luminous intensity ? wavelength ambient temperature ta (c) i f ? ta allowable forward current i f (ma) radiation pattern ta = 25c 30 0 60 90 90 30 60 1.0 0.8 0.6 0.4 0.2 0 80 70 50 40 20 10 70 80 50 40 20 10 0 60 0 40 80 20 120 20 40 60 80 100 20 ? 20 80 0.1 3 1 0.3 0.5 0 40 60 5 10 700 0.8 0 0.6 1.0 0.2 0.4 i f = 20 ma ta = 25c 680 660 640 620 600 580 10 1 100 3000 1000 ta = 25c 100 10
tl(re,rme,se,oe,ye,pye,ge,fge,pge)53t(f) 2007-10-01 5 tlse53t(f) 1.6 50 30 10 3 1 5 100 ta = 25c 1.7 1.8 1.9 2.0 2.1 2.2 2.3 relative luminous intensity forward voltage v f (v) i f ? v f forward current i f (ma) forward current i f (ma) i v ? i f luminous intensity i v (mcd) case temperature tc (c) i v ? tc relative luminous intensity i v wavelength (nm) relative luminous intensity ? wavelength ambient temperature ta (c) i f ? ta allowable forward current i f (ma) radiation pattern ta = 25c 30 0 60 90 90 30 60 1.0 0.8 0.6 0.4 0.2 0 80 70 50 40 20 10 70 80 50 40 20 10 10 1 100 10000 1000 ta = 25c 100 10 0 60 0 40 80 20 120 20 40 60 80 100 680 0.8 0 0.6 1.0 0.2 0.4 i f = 20 ma ta = 25c 660 640 620 600 580 560 20 ? 20 80 0.1 3 1 0.3 0.5 0 40 60
tl(re,rme,se,oe,ye,pye,ge,fge,pge)53t(f) 2007-10-01 6 tloe53t(f) 1.6 50 30 10 3 1 5 100 ta = 25c 1.7 1.8 1.9 2.0 2.1 2.2 2.3 relative luminous intensity forward voltage v f (v) i f ? v f forward current i f (ma) forward current i f (ma) i v ? i f luminous intensity i v (mcd) case temperature tc (c) i v ? tc relative luminous intensity i v wavelength (nm) relative luminous intensity ? wavelength ambient temperature ta (c) i f ? ta allowable forward current i f (ma) radiation pattern ta = 25c 30 0 60 90 90 30 60 1.0 0.8 0.6 0.4 0.2 0 80 70 50 40 20 10 70 80 50 40 20 10 0 60 0 40 80 20 120 20 40 60 80 100 660 0.8 0 0.6 1.0 0.2 0.4 i f = 20 ma ta = 25c 640 620 600 580 560 540 20 ? 20 80 0.1 3 1 0.3 0.5 0 40 60 10 1 100 10000 1000 ta = 25c 100 10
tl(re,rme,se,oe,ye,pye,ge,fge,pge)53t(f) 2007-10-01 7 tlye53t(f) 1.6 50 30 10 3 1 5 100 ta = 25c 1.7 1.8 1.9 2.0 2.1 2.2 2.3 relative luminous intensity forward voltage v f (v) i f ? v f forward current i f (ma) forward current i f (ma) i v ? i f luminous intensity i v (mcd) case temperature tc (c) i v ? tc relative luminous intensity i v wavelength (nm) relative luminous intensity ? wavelength ambient temperature ta (c) i f ? ta allowable forward current i f (ma) radiation pattern ta = 25c 30 0 60 90 90 30 60 1.0 0.8 0.6 0.4 0.2 0 80 70 50 40 20 10 70 80 50 40 20 10 0 60 0 40 80 20 120 20 40 60 80 100 660 0.8 0 0.6 1.0 0.2 0.4 i f = 20 ma ta = 25c 640 620 600 580 560 540 20 ? 20 80 0.1 3 1 0.3 0.5 0 40 60 10 1 100 10000 1000 ta = 25c 100 10
tl(re,rme,se,oe,ye,pye,ge,fge,pge)53t(f) 2007-10-01 8 TLPYE53T(f) 2.0 1.6 2.3 50 30 10 3 1 1.7 2.1 5 100 1.8 1.9 2.2 ta = 25c relative luminous intensity forward voltage v f (v) i f ? v f forward current i f (ma) forward current i f (ma) i v ? i f luminous intensity i v (mcd) case temperature tc (c) i v ? tc relative luminous intensity i v wavelength (nm) relative luminous intensity ? wavelength ambient temperature ta (c) i f ? ta allowable forward current i f (ma) radiation pattern ta = 25c 30 0 60 90 90 30 60 1.0 0.8 0.6 0.4 0.2 0 80 70 50 40 20 10 70 80 50 40 20 10 0 60 0 40 80 20 120 20 40 60 80 100 580 540 660 0.8 0 0.6 1.0 0.2 0.4 560 600 620 640 i f = 20 ma ta = 25c 20 ? 20 80 5 0.1 3 10 1 0.3 0.5 0 40 60 10 1 100 3000 1000 ta = 25c 100 5 10
tl(re,rme,se,oe,ye,pye,ge,fge,pge)53t(f) 2007-10-01 9 tlge53t(f) 1.6 50 30 10 3 1 5 100 ta = 25c 1.7 1.8 1.9 2.0 2.1 2.2 2.3 relative luminous intensity forward voltage v f (v) i f ? v f forward current i f (ma) forward current i f (ma) i v ? i f luminous intensity i v (mcd) case temperature tc (c) i v ? tc relative luminous intensity i v wavelength (nm) relative luminous intensity ? wavelength ambient temperature ta (c) i f ? ta allowable forward current i f (ma) radiation pattern ta = 25c 30 0 60 90 90 30 60 1.0 0.8 0.6 0.4 0.2 0 80 70 50 40 20 10 70 80 50 40 20 10 0 60 0 40 80 20 120 20 40 60 80 100 640 0.8 0 0.6 1.0 0.2 0.4 i f = 20 ma ta = 25c 620 600 580 560 540 520 10 1 100 5000 1000 ta = 25c 100 10 20 ? 20 80 0.1 3 1 0.3 0.5 0 40 60 5 10
tl(re,rme,se,oe,ye,pye,ge,fge,pge)53t(f) 2007-10-01 10 tlfge53t(f) 2.0 1.6 2.3 50 30 10 3 1 1.7 2.1 5 100 1.8 1.9 2.2 ta = 25c relative luminous intensity forward voltage v f (v) i f ? v f forward current i f (ma) forward current i f (ma) i v ? i f luminous intensity i v (mcd) case temperature tc (c) i v ? tc relative luminous intensity i v wavelength (nm) relative luminous intensity ? wavelength ambient temperature ta (c) i f ? ta allowable forward current i f (ma) radiation pattern ta = 25c 30 0 60 90 90 30 60 1.00.8 0.6 0.4 0.2 0 80 70 50 40 20 10 70 80 50 40 20 10 0 60 0 40 80 20 120 20 40 60 80 100 560 520 640 0.8 0 0.6 1.0 0.2 0.4 540 580 600 620 i f = 20 ma ta = 25c 20 ? 20 80 5 0.1 3 10 1 0.3 0.5 0 40 60 10 1 100 1000 100 ta = 25c 10 3
tl(re,rme,se,oe,ye,pye,ge,fge,pge)53t(f) 2007-10-01 11 tlpge53t(f) relative luminous intensity forward voltage v f (v) i f ? v f forward current i f (ma) forward current i f (ma) i v ? i f luminous intensity i v (mcd) case temperature tc (c) i v ? tc relative luminous intensity i v wavelength (nm) relative luminous intensity ? wavelength ambient temperature ta (c) i f ? ta allowable forward current i f (ma) radiation pattern ta = 25c 1.6 50 30 10 3 1 5 100 ta = 25c 1.7 1.8 1.9 2.0 2.1 2.2 2.3 30 0 60 90 90 30 60 1.00.8 0.6 0.4 0.2 0 80 70 50 40 20 10 70 80 50 40 20 10 10 1 100 1000 100 ta = 25c 10 1 0 60 0 40 80 20 120 20 40 60 80 100 20 ? 20 80 0.1 3 1 0.3 0.5 0 40 60 5 10 640 0.8 0 0.6 1.0 0.2 0.4 i f = 20 ma ta = 25c 620 600 580 560 540 520
tl(re,rme,se,oe,ye,pye,ge,fge,pge)53t(f) 2007-10-01 12 restrictions on product use 20070701-en ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity a nd vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? gaas(gallium arsenide) is used in this product. the dus t or vapor is harmful to the human body. do not break, cut, crush or dissolve chemically. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.

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